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This letter presents a fully integrated highly linear 4-bit SiGe PIN diode phase shifter MMIC for Ku-band phase-array application in the standard SiGe BiCMOS process. High-performance customized SiGe PIN diode switches are employed for high linearity and low insertion loss. The use of differential inductors in the hybrid switched filters makes this phase shifter compact in size. Measurements show...
This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove...
A high isolation 15-GHz radiation tolerant SPDT (single-pole double-throw) annular MOSFET switch, for space application, was designed and integrated in a SiGe BiCMOS process. Schwartz-Christoffel transformation, based on conformal mapping, and parasitic capacitance extraction methods were utilized to derive the equivalent circuit model of the octagonal annular MOSFET, which has demonstrated improved...
This paper presents a high isolation SPDT switch design based on new octagonal PIN diode structure in IBM7HP SiGe process. The series-shunt-shunt 6.25mum2-50mum2-50mum2 PIN diode combination is used in SPDT switch design to get high isolation for a phase array application. The switch achieves minimum isolation of 45 dB and maximum insertion loss of 0.64 dB over 10 GHz to 20 GHz covering X and Ku frequency...
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