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This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove...
This paper presents a new harmonic filtering technique to lower the phase noise of CMOS LC voltage-controlled oscillator (VCO) based on loaded-Q improvement approach. A single resistor was used at the drain node of the bias transistor instead of extra inductors and capacitors. The wide-band nature of resistance can suppress the second harmonic as well as other even harmonics leaking from the LC tank...
A high isolation 15-GHz radiation tolerant SPDT (single-pole double-throw) annular MOSFET switch, for space application, was designed and integrated in a SiGe BiCMOS process. Schwartz-Christoffel transformation, based on conformal mapping, and parasitic capacitance extraction methods were utilized to derive the equivalent circuit model of the octagonal annular MOSFET, which has demonstrated improved...
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