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This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200°C using the single-precursor hexamethyldisilane Si2(CH3)6 (HMDS) as the Si and C precursors. 0~40 seem N2 gas was used as the doping source. A...
This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC thin films for extreme environment microelectronics and MEMS. The growth of the polycrystalline 3C-SiC thin film on oxided Si wafers was carried out by using atmospheric pressure chemical vapor deposition (APCVD) with a single-precursor of hexamethyldisilane (HMDS: Si2(CH3)6). This work was done for deposition...
This paper presents the growth conditions and characteristics of polycrystalline (poly) 3C-SiC thin films for micro/nano-electromechaical systems (M/NEMS) applications. The growth of the poly 3C-SiC thin film on oxided Si wafers was accomplished by APCVD using single precursor hexamethyldisilane (HMDS: Si2(CH3)6). Depositions were performed under various temperatures and HMDS flow rates, which were...
This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AIN buffer layers by CVD. FT-IR was used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layers were investigated by XPS and...
In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS...
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