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In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS...
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