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A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
A novel non-uniform multi-reversed-junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the buried layers during operation in the blocking mode, and the breakdown voltage is improved considerably. A detailed study of the influence of various important parameters on blocking characteristics was carried...
Device simulations are applied to find out the effects of floating island thickness (dF) and doping concentration (Np+) in power floating island MOSFET (FLIMOS). The simulation results show that the specific on-resistance (Ronmiddotsp) increases by enlarging dF while Np+ produce little influence on Ronmiddotsp; When Np+ is low, the breakdown voltage (Vbr) improves by enlarging dF; When Np+ is high,...
In this paper, a novel substrate engineered power MOSFET with partial floating buried-layer is proposed. The proposed LDMOS with 2 mum thin epitaxial layer is designed . It is demonstrated that new electric field generated by the buried-layer modulates electric field in drift region and the voltage handling capability is enhanced. Influences of length, thickness and doping concentration of the buried-layer...
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