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As VLSI technology advances and memories occupy more and more area in a typical SOC, memory diagnosis has become an important issue. In this paper, we propose the Memory Failure Pattern Analyzer (MFPA), which is developed for different memories and technologies that are currently used in the industry. The MFPA can locate weak regions of the memory array, i.e., those with high failure rate. It can...
There is growing need for embedded memory built-in self-repair (MBISR) due to the introduction of more and more system-on-chip (SoC) and other highly integrated products, for which the chip yield is being dominated by the yield of on-chip memories, and repairing embedded memories by conventional off-chip schemes is expensive. Therefore, we propose an MBISR generator called BRAINS+, which automatically...
As the VLSI technology scaling continues and the device dimension keeps shrinking, memories are more and more sensitive to soft errors. Memory cores usually occupy a large portion of an SOC and have significant impact on the chip reliability. Therefore error detection and correction (EDAC) techniques are commonly used for protecting the system against soft errors. This paper presents a novel EDAC...
To reduce test cost for SOC products, it is important to reduce the cost of testers. When using low-cost testers which have a limited test bandwidth to perform testing, built-in- self-test (BIST) is necessary to reduce the data volume to be transmitted between the tester and the device-under-test (DUT). We enhance the SOC test integration tool, STEAC, so that it can support SOCs containing BISTed...
It is common that an SOC contains hundreds or even thousands of heterogeneous embedded memories. Many of these embedded memories have wide data words, leading to high routing penalty from the BIST circuits. Previous BIST schemes solve the problem using serial interface, e.g., based on the IEEE 1500 architecture and novel scan approaches, to reduce the routing area overhead. However, serial approaches...
The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future. The MRAM is fast and does not need a high supply voltage for read/write operations. It can also endure almost unlimited read/write cycles. These combined advantages of RAM and flash memory make it a potential choice for SOC...
The strong demand of non-volatile memory for SOC and SIP applications has made flash memory increasingly important. However, deep submicron defects and process uncertainties are causing yield loss of memory products. To solve the yield issue, built-in self-repair (BISR) is widely believed to be cost effective. It is, however, non-trivial to implement BISR on flash memories. In this paper we propose...
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