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Bonding conditions and characteristics of N2-plasma activated bonding for GaInAsP/SOI hybrid lasers are explained. SEM and TEM images reveal high quality bonding interface and less damage quantum wells, which are enough to realize hybrid lasers.
A GaInAsP/Si hybrid Fabry-Perot laser, fabricated by low temperature N2 plasma surface activated bonding on a Si substrate, was demonstrated. Lasing operation at room temperature was realized with a threshold current density of 0.85 kA/cm2.
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