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We have compared the performances of 980-nm InGaAs quantum-dot and quantum-well laser diode grown by molecular beam epitaxy. The quantum-dot laser diodes show superior performance to the quantum-well laser diodes in their lower threshold current density and temperature sensitivity.
GaAsNSb alloys have been demonstrated using MOCVD growth over a wide span of nitrogen composition. Dilute-nitride alloys hold potential for mid-IR emission using GaAsSbN/GaAsSb type-II QWs.
InGaAsN/GaAsSb dasiaWpsila type-II strain compensated quantum well lasers on GaAs substrates are grown by MOCVD. Preliminary lasers with 3-stage active regions exhibit emission that is blue-shifted from the PL, due to charge separation and higher-energy transitions.
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