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High power photoconductive semiconductor switches (PCSSs) are considered a promising device for compact, repetitive pulsed power generation due to their advantages over other switches, such as fast response time, negligible time jitter, precise synchronization, high repetition rate and optical electrical isolation.
Current filamentation during the high gain or non-linear switching mode in GaAs photoconductive semiconductor switches (PCSS) was reported in many papers. Optical properties which influence triggering include wavelength, temporal width, spatial size, and uniformity. The most important electrical property is the initial field produced across the switch. In this paper a high speed camera is used to...
The photocurrent waveform from the semi-insulating GaAs Photoconductive semiconductor switch (PCSS) when using different trigger laser energy and electric field has been tested. The peak value of current is in direct proportion to the work voltage at higher laser energy and lower storage capacitor shown different switch characterizes from the existing two work modes. A photograph of the switch has...
A photoconductive semiconductor switch (PCSS) with a gap of 0.018 m was fabricated from semi-insulating GaAs. Illuminated by a laser pulse with varying optical energies at a wavelength of 1064 nm, the photoconductivity tests of the PCSS were performed at different bias voltages. In nonlinear mode, by comparing the charge initially stored in the capacitors and the charge through the switch, it is found...
A single photoconductive semiconductor switch with electrode gap of 18mm was fabricated from semi-insulating GaAs, of which the most notable defect was EL2. Photoconductivity tests were performed using 1064nm wavelength laser pulse. The PCSS began to work in the nonlinear mode at 10kV with the laser energy of 10.6mJ. The highest photocurrent tested for 11.4mJ optical excitation at the bias voltage...
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