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Under injection-locking with downstream amplified spontaneous emission (ASE) carrier spectrally sliced by a 200-GHz arrayed waveguide grating and amplitude-squeezed by a gain-saturated semiconductor optical amplifier (SOA), the injection-level-dependent extinction ratio (ER) and bit-error-rate (BER) penalty of a weak-resonant-cavity Fabry-Perot laser diode (WRC-FPLD) upstream transmitter are investigated...
The BER and noise characteristics of 1.25 Gbit/s directly modulated ASE injection-locked mode-number tunable weak-resonant-cavity laser diode transmitter for WDM-PON system with channel spacing of 200 GHz are characterized.
Biased current and temperature dependence of amplified spontaneous emission injection-locked reflective semiconductor optical amplifier based transmitter directly modulated at 622 Mbit/sec and 1.25 Gbit/sec in DWDM-PON system with channel spacing of 200 GHz are characterized.
Chirp analysis of color-less RSOA transmitter with 2-3 ASE injection-locked modes for 1.25 Gb/s metropolitan WDM-PON network reaching BER of 10-9 under receiving power below -29.5 dBm and power penalty of <0.1 dB after 25 km transmission is demonstrated.
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