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2D van der Waals (vdW) semiconductors hold great potentials for more‐than‐Moore field‐effect transistors (FETs), and the efficient utilization of their theoretical performance requires compatible high‐k dielectrics to guarantee the high gate coupling efficiency. The deposition of traditional high‐k dielectric oxide films on 2D materials usually generates interface concerns, thereby causing the carrier...
For next‐generation Internet‐of‐Everything applications, for example, artificial‐neural‐network image sensors, artificial retina, visible light communication, on‐chip light interconnection, and flexible devices, etc., high‐performance microscale photodetectors are in urgent demands. 2D material (2DM) photodetectors have been researched and demonstrated impressive performances. However, they have not...
2D transition metal dichalcogenides materials are explored as potential surface‐enhanced Raman spectroscopy substrates. Herein, a systematic study of the Raman enhancement mechanism on distorted 1T (1T′) rhenium disulfide (ReS2) nanosheets is demonstrated. Combined Raman and photoluminescence studies with the introduction of an Al2O3 dielectric layer unambiguously reveal that Raman enhancement on...
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