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We anneal GaN samples in ultra high vacuum system for two times at the same temperature of 710 °C, and activate the sample after each heating by Cs/O. The vacuum level, residual gas, QE, and photocurrents are compared. We find, for the 1st annealing vacuum level line has a shape of “W”, but the 2nd looks like “V”. The residual gases include H2, H2O, N2, and CO2 mainly. Nothing else has been detected...
High temperature annealing and Cs, O activation is the formations of NEA GaN photocathode of external incentives, GaN material performance of the cathode of the internal factors are fundamental. In this paper, aiming at the difference of the uniform-doping and gradient-doping NEA GaN photocathode in structure, combined with the cathode active changes of the optical current and activated after the...
The thickness of emission layer Te has the significant influence on quantum efficiency (QE) of NEA GaN semitransparent UV-photocathode. According to W.E.Spicer's photoemission "3-step model" theory, the whole process is described as photoelectron excitation, transportation from bulk to surface and escape to the vacuum by traversing surface barrier. The first two steps have taken place in...
Single-crystal GaN films have been deposited on (0112) sapphire substrates using trimethylgallium (TMGa) and NH 3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration of undoped GaN increases with decreasing input NH 3 -to-TMGa molar flow ratio.
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