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The properties of Cu(V) alloy films were investigated to evaluate its potential use as self-forming diffusion barrier in copper metallization. Cu(V) alloy films were deposited on SiO2/Si substrates by magnetron sputtering. Cu(V)/SiO2/Si systems were subsequently annealed at various temperatures and analyzed by four-point probe measurement (FPP), X-ray diffraction (XRD), X-ray photoelectron spectroscopy...
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