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SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates...
Many methods have been developed for mesh segmentation with different advantages and disadvantages. How to integrate the virtues of different segmentations is an attractive problem. This paper proposes a Face-Face Similarity Probability (FFSP) matrix for fusing the results from different segmentation algorithms. Each element of the matrix represents the probability that two faces belong to the same...
This paper presents the characteristics of the first commercial 1200V 100A SiC MOSFET module and compares it with state-of-the-art silicon IGBT with the same rating. The results show that the 1200V SiC MOSFET has faster switching speed and much lower loss compared with silicon IGBT. Moreover, the silicon IGBT switching loss will increase significantly for higher operation temperature, while the SiC...
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