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In this work, we have presented an analytical model for a recently proposed symmetrical recessed double gate junctionless field‐effect transistor (R_DGJLFET) operating in subthreshold region. The model has been developed by solving a two‐dimensional Poisson's equation in three continuous rectangular silicon regions, resulting in explicit expressions for surface potential, center potential, and eventually...
The paper proposes a current mirror designed using the current sensor structure of class‐AB flipped voltage follower cell at the input stage and super cascode structure at the output stage. The proposed current mirror offers low input resistance due to the current sensor at the input stage and high output resistance due to super cascode configuration at the output stage. The proposed current mirror...