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GaN super heterojunction field effect transistors (super HFET) based on the polarization junction concept are demonstrated for the first time. The super HFET has charges of 2-D electron gas and hole gas, respectively induced by positive and negative polarization charges at GaN/AlGaN/GaN heterointerfaces. Analogous to the RESURF concept, these unintentionally doped positive and negative polarization...
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