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In this paper, a vital sign feature (V SF) detection and search strategy using multiple UWB life-detection-radars with different locations is proposed. Firstly, the different VSFs from all single UWB life-detection radars placed on multiple radar observation points are categorized. Then, the proposed detection strategy is used for the different VSF categories. Finally, the target's spatial location...
In this paper, according to the two design principles of uniform distribution and less element shadowing for effective aperture, a novel two-dimensional (2-D) sparse ultra-wideband (UWB) multiple-input-multiple-output (MIMO) antenna array topology is proposed for near-field high-resolution imaging. Compared with another different array having the same number of transceivers, the proposed optimal array...
A high-efficiency scheme based on both time division multiplexing (TDM) and parallel processing of FPGA is proposed in this paper to address the problem of high scanning rate in high-speed measurements with UWB array GPR. The merit of this new scheme is that all trigger signals of all the channels can be delayed in a controllable step through the same delay chip at different times. Each channel of...
The control of gate height uniformity, especially within-die gate height uniformity, and metal gate surface properties of 14nm technology node replacement metal gate (RMG) chemical mechanical polishing is important for 14nm high-k metal gate (HKMG) process. Good within-die uniformity would benefit for the following Tungsten etching back process(WEB) to have a uniform within-die etching depth, and...
Sub-fs timing synchronization between a 1030nm Yb-doped and a 1560nm Er-doped mode-locked fiber laser is successfully demonstrated by utilizing a hybrid passive/active approach. The physical mechanisms for determining the relative timing jitter are clarified.
This paper reports a transfer process of silicon stress and Pt temperature sensors for versatile requirements. Based on a 3µm thick BCB adhesive layer, a 1.6 mm × 1.6 mm donor chip with stress and temperature sensors, which are fabricated on the silicon-on-insulator wafer using standard MEMS process, is bonded on a target wafer. After the bottom silicon layer and the insulator SiO2 layer of the donor...
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