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In this letter, the first packaged THz solid-state amplifier operating at 0.85 THz is reported. The InP HEMT amplifier achieves a noise figure as low as 11.1 dB with an associated gain of 13.6 dB at 0.85 THz using high InP HEMT transistors in a 10-stage coplanar waveguide integrated circuit. Output power up to 0.93 mW is measured.
We present on-wafer and packaged measurements of a broad-band 170–280 GHz low noise amplifier based on high frequency InP HEMT technology. Discussed is the design and packaging of the CPW-based MMIC. Chip-to-waveguide transitions are monolithically integrated onto the MMIC to minimize losses at the transition within the split-block-waveguide housing. Packaged gain and noise figure are reported to...
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