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Single event sensitivity of bulk 40-nm sequential circuits is investigated as a function of temperature and supply voltage. The temperature dependence of single event upsets is different for relatively high supply voltage and ultra-low supply voltage. Single-event-transient induced errors in flip-flops are more sensitive to temperature variation than single event upsets.
A high-speed and low-power preread and write sense amplifier (PWSA) is presented for magnetoresistive RAM (MRAM). The sense amplifier incorporates a writing circuit for MRAM bits switched via timing of precessional dynamics ($\sim $ GHz speed) in a magnetic tunnel junction (MTJ). By combining read and write functions in a single power-efficient circuit, the PWSA allows for fast read and write operations...
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