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To greatly enhance the performance of our previously developed CMOS-MEMS resonant gate field effect transistor (RGFET) [1], a novel CMOS-MEMS RGFET array which combines a metal/oxide composite resonant-gate arrayed structure and a FET arrayed transducer has been proposed for the first time utilizing the TSMC 0.35 μm CMOS technology together with a series of maskless wet etching processes. To resemble...
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