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AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (Vbk) of AlGaN/GaN HEMTs grown on Si (less than 600 V for 2 μm total nitride epilayer) is much lower than that grown on SiC (1.9 kV for 2 μm total epi-layer). Although several approaches have...
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