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TSV (Through Silicon Via) is an enabling technology for 3D WLP (Wafer Level Packaging) and 3D integration. TSV is a very hot topic for semiconductor industry today. One of the key processes for TSV is the electroplating process. The quality and rate of electroplating are two critical parameters for TSV filling, which can be significantly improved by Bottom-Up filling with much thinner overburden....
Pretreatments have a great effect on the through silicon via (TSV) copper electroplating filling process. In this study, we compared the wetting effect by observing cross-sectional images of samples pretreated with ultrasound and vacuuming method. And the electrochemical test was used to verify the effect of acid plating solution on the oxidation of the Cu seed layer. Without any pretreatment, vias...
There are many factors which will affect the final result of TSV filling, such as ratio of the additives including accelerator, suppresser, leveler and so on. Complicated environment is also hard to control exactly. If we want to form the “bottom up” in the plating, there must be comprehensively consideration of all factors. Many studies have focused on the effect of additives on the plating uniformity...
Deep via filling is one of key technologies of 3D packaging. Vias are commonly filled by electroplating. Since cupric transportation in vias is limited by diffusion, Current density is one of the most influential factors for copper plating in vias. We investigated new additive of accelerator, suppressor and leveler. Simulation of the competitive adsorption ability of accelerator and suppressor at...
Copper electrodeposition in acidic cupric methanesulfonate bath with organic additives is discussed in this paper. The influence of poly(ethylene glycol) (PEG) and bis-(3-sodiumsulfopropyl disulfide) (SPS) on copper deposition were studied by means of linear sweep voltammetry, cyclic voltammetry and chronoamperometry. These electrochemical analysises revealed a competition of PEG and SPS on electrode...
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