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The switching performance of GaN‐based p‐i‐n diodes on Si was investigated for the first time. A double‐pulse test circuit using an inductive load was utilized to evaluate the diode's switching characteristics. When the GaN diode was switched from an on‐state with IF = 450 mA to an off‐state with VR = −200 V (dIF/dt = 16 A/μs), the peak reverse recovery current (Irr) and time (trr) was measured to...
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