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The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.
A novel approach for estimating variation in the TDDB failure time is reported. The results for structures with Dual Damascene copper-based metallization and a low-k dielectric material demonstrate that variation in the initial current at stress reasonably predicts variation in the TDDB failure time. Moreover, the method does not cause failure in the structures and is more efficient compared to other...
MEMS initiator has been developed rapidly for its low detonating power and small volume. MEMS metal bridge as one type of the MEMS initiators, which has the same process with ASIC (Application-specific integrated circuit). In this paper, one novel ASIC self-destruction technology in chip level mainly based on MEMS metal bridge initiator is presented. A typical experimental structure was designed....
We show that interplay of different loss mechanisms leads to a minimization of overall loss in a semiconductor plasmon polariton nanolaser. A practical design is proposed with a total volume of 1.5 × 10−4 λ03.
Co films with various thicknesses were selectively deposited as Cu capping layers by a chemical vapor deposition technique. Both in-situ and ex-situ Co/SiC(N,H), metal/dielectric, capping processes were evaluated and shown comparable parametrics to the control reference, which contains only SiC(N,H) cap layer. A dependence of Cu electromigration (EM) resistance on the deposited Co thickness was observed...
We present recent results on modeling, fabrication, and characterization of semiconductor nanolasers based on semiconductor-metal core-shell waveguides. In particular, results of lasers with a sub-diffraction-limit thickness will be presented under electrical injection.
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