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We have applied our previous method of self‐consistent k*‐factors for absorption correction in energy‐dispersive X‐ray spectroscopy to quantify the indium content in X‐ray maps of thick compound InGaN layers. The method allows us to quantify the indium concentration without measuring the sample thickness, density or beam current, and works even if there is a drastic local thickness change due to sample...
Based on Monte Carlo simulations of X‐ray generation by fast electrons we calculate curves of effective sensitivity factors for analytical transmission electron microscopy based energy‐dispersive X‐ray spectroscopy including absorption and fluorescence effects, as a function of Ga K/L ratio for different indium and gallium containing compound semiconductors. For the case of InGaN alloy thin films...
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