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The structural properties of nitride‐based light‐emitting diodes (LEDs) grown on micro‐ and nano‐scale patterned sapphire substrates (PSS) were discussed in detail. The high resolution X‐ray diffraction (HRXRD) and etch‐pit density (EPD) results reveal that the crystalline quality of the epitaxial GaN film could be effectively improved by using the PSS technique, and depended on the aspect ratio of...
Electroluminescence (EL) from a forward biased Ni/Au‐AlGaN/GaN Schottky diode was observed and studied in this work. The turn‐on voltage of the EL was found to be coinciding with the second turn‐on voltage in the current‐voltage characteristics. Similarity between EL and photoluminescence spectra suggests that the holes are injected into the GaN layer when the applied bias is higher than the second...
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