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We demonstrate that the electronic and optical properties of ZnO can be improved by inserting into it with an ultrathin ZnX (X = S, Se and Te) layer to form short-period (ZnO)5/(ZnX)1 superlattices (SLs), which is a very promising substitution for p-type doping of ZnO. Results show that the SLs have some superior properties compared with bulk ZnO due to the strong modulation of the ZnX layer. The...
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