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In this work, the organic residue and oxide on silicon wafer were treated with UV-excited oxygen and trifluoronitrogen gases as a pre-treatment for silicon homoepitaxy. A typical positive photo resist, AZ 1512, was coated as a model organic residue. UV-O 2 cleaning (UVOC) and UV-NF 3 /H 2 treatment removed the organic residue and native oxide layer, respectively, for silicon...
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