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In article number 2006496, Liang Li, Guanghai Li, and co‐workers synthesize silicon‐based semiconductor Si2Te3 crystals using a chemical vapor deposition technique. The combined features of silicon and layered structure bridge the 2D materials family and silicon‐based materials family together, while the intrinsic defects in Si2Te3 yield ultrawide photoluminescence spectra and broadband spectral response...
Silicon‐based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical‐optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next‐generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon‐based...
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