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GaN on Al 2 O 3 was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 µm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes,...
The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO 2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO 2 nanospheres were prepared by a simple solution-based...
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