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GaAs nanowires growth on GaAs(111)B substrates by Au-assisted MBE with solid As 4 source were investigated as function of group III and V flux, growth time and growth temperature. It was found that the axial, radial growth and crystal structure of NWs could be controlled through tuning growth parameters. The optimal strategies for one dimensional nano-scale devices fabrications were also suggested.
In this paper, we report the fabrication of rib waveguides and passive waveguide devices such as multimode interference (MMI) splitters using sol–gel organic–inorganic hybrid materials. The multilayered waveguides were developed, using spin-coating and photolithography processes. Optical coupling using lasers of 632.8-, 780- and 1550-nm wavelength was conducted by direct fiber end-face coupling to...
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