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We reported the high quality semipolar (11‐22) GaN grown on m‐sapphire by using the novel two‐step growth method without low temperature GaN or AlN buffer layer. It is found that macroscopic surface morphology of semipolar GaN epilayer was very smooth, while microscopic surface structure was arrowhead‐like surface structure toward the direction of [1‐21‐1]. Anisotropic crystal properties of semipolar...
We have successfully demonstrated a world smallest 0.25 μm2 cell ITIC 64 Mb FRAM at a 130 nm technology node. This small cell size was achieved by scaling down a capacitor stack, using the following technologies: a robust glue layer onto the bottom electrode of a cell capacitor; 2-D MOCVD PZT technology, novel capacitor-etching technology; and a top-electrode-contact-free (TEC-free) scheme. The new...
We have successfully demonstrated a 0.34mum2 COB cell 1T1C 64Mb FRAM at 150nm technology node. The minimum signal window between data "1" and data "0" of 64M bit cells was evaluated to 300mV at 85degC, 1.6V VDD. This wide signal window was achieved by introducing advanced anneal technology and optimized capacitor layout, from which the variation of individual cell charge was greatly...
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