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In this work, microwave annealing is explored to tune the Schottky barrier height between NiSi and Si via boron and arsenic dopant segregation using silicide as diffusion source scheme. The microwave annealing is found to be able to obtain equivalent electron and hole Schottky barrier heights at significantly lower temperature (>100 °C) compared with conventional rapid thermal annealing. A plausible...
Heating of silicon substrates featuring different resistivity values by microwave annealing is investigated. The absorption of microwave energy for silicon wafers is found to be consistent with ohmic conduction loss theory. The strongest absorption occurs when the resistivity was around 10 Ω·cm. As the carrier concentration and the conductivity of silicon increase with temperature, the absorption...
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