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A novel low temperature wafer-level Cu-Cu bonding method using Ag nanoparticles (NP) was proposed and realized in this paper. A bonding structure consisted of Cu bonding pads, TiW barrier/adhesive layer was firstly fabricated on the silicon wafer. Ag NPs were then deposited by physical vapor deposition (PVD) on Cu pads. The morphology of Ag NPs annealed at different temperature was studied. Bonding...
In order to lower Cu-Cu bonding temperature and shorten bonding time applied for 3D integration, nanostructure has been introduced on bonding Cu surface. However, few studies have been reported on Nano Particles (NPs) formation by film deposition process such as pulsed laser deposition (PLD), which would be compatible with CMOS process. In this work Ag nanostructure containing strings of NPs was formed...
The icing flashover is increasingly becoming a serious problem with the development of the extra-high voltage engineering. Reducing the bonding strength between the substrate and the ice by super-hydrophobic coating is a choice for the anti-icing. The bare insulator, RTV coated insulator and the super-hydrophobic insulator are chosen for comparing. The experimental facility is set up. The vertical...
TiN diffusion barrier layers were deposited on SiO2/Si substrate by ALD method that employed TiCl4 and NH3 as the source and reactant gases, respectively, at a temperature range between 350°C and 500°C. Properties of films, including deposition rate, resistivity, surface roughness and chemical composition, were investigated, and performance of TiN diffusion barrier layer was also verified. Deposition...
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