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Polycrystalline ZnO thin films were synthesized on Si(111) substrates by pulsed laser deposition (PLD) under oxygen sufficient condition at temperatures ranging from 550 to 700∘C. The results of in situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) show that the (002) orientation of ZnO thin films is deteriorated, but the full-width at half-maximum (FWHM) of (002)...
Epitaxial ZnO thin films have been synthesized directly on Si(111) substrates by pulsed laser deposition (PLD) in vacuum. The reflection high-energy electron diffraction (RHEED) indicates that streaky patterns can be clearly observed from the ZnO epilayers prepared at 600 and 650°C, revealing a two-dimensional (2D) growth mode. While the ZnO thin film deposited in oxygen ambient shows ring RHEED pattern...
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