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Vertical heterojunctions formed by layer-by-layer stacking of two-dimensional (2D) transition metal dichalcogenides (TMDs) are believed to be the key element of next-generation optoelectronic devices. For developing devices based on such heterostructures, their patterned arrays at pre-defined locations are needed. Here, we present a novel route for achieving MoS2 (2D)/WS2 heterojunctions arrays by...
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