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GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those...
The interfacial reactions between (111) Cu single crystals and lead-free solders (pure Sn, Sn-0.7Cu and Sn-0.7Cu-0.1Ni) during solid-state aging at 150 °C were investigated in this study. The morphological evolution and the growth behavior of interfacial IMCs during short-period (0 to 100 h) aging process were studied. For the solders without Ni, the interfacial Cu6Sn5 grains displayed prism shape...
Electroless Sn films have great potential in the lead-free age such as for high-density, fine-pitch, narrow soldering pad and bump interconnection applications. In the present work, electroless Sn were deposited onto lead-frame alloys (C194 and FeNi42). The microstructures of the electroless Sn films and tin whisker growth in thermal / humiditive chamber were investigated with scanning electron microscope...
The effect of solder volume on the interfacial reactions between Sn-3.0Ag-0.5Cu solder balls and Cu pads during reflow soldering was investigated. Sn-3.0Ag-0.5Cu solder balls of 200, 300, 400, and 500 μm in diameters were employed to react with Cu pads on PCB with the opening diameter of 250 μm The reflow profile was set to reach a peak temperature of 250 °C and maintain a duration of 45s above the...
Highly semi-polar (101̅3) oriented and fine structural AlN films were successfully prepared on silicon substrate by rf magnetron sputtering in this research. The dependence of the nitrogen concentrations and the material characteristics of the films (crystalline structure and micro morphology) were investigated. The crystalline structure of the films was determined by X-ray diffraction (XRD) and the...
Since organic materials are easily damaged, failure analysis of electronic devices on flexible substrate using practice FA techniques is hard to procure. However, worse uniformity of organic thin film and high driving voltage may result in failures seldom discovered in conventional Si-based device. This paper aims to analyze the failures of organic thin-film transistors (OTFTs) by the techniques established...
A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degC under the supply...
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