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Stacked chip packaging (3D packaging) is an effective method to increase the density of electronic packaging, due to the packaging density on an single chip has reached the limit of current packaging process. In stacked chip packaging system, additional chips are implemented on a single chip in the third dimension, thus multiply enhance the density of electronic packaging, while the packaging size...
Just in few years, three-dimensional (3D) packaging technologies have attracted much more attention. With emergence of through-silicon via (TSV) technology, silicon-based device integrations, the TSV's, have become the main stream of 3D packaging technologies. TSV's can be further classified as 2.5D and 3D TSV's. For 2.5D TSV package assembly, since multiple components involved, there are normally...
Wafer level packaging (WLP) is regarded as one of the most potential single chip packages for its compatibility with wafer fabrication process. As the pitch size of the package becomes lower, the reliability of fine pitch WLP devices is greatly challenged. Finer pitch may result in weaker solder joints, which leads to reliability problems such as fatigue failure, creep deformation and so on. Much...
Materials with high dielectric permittivity and low dielectric loss are important materials applied in electronic devices such as capacitors, gate dielectrics, memories, and power-storage devices. The polymer materials with good processability usually have low dielectric loss but low dielectric permittivity. Conventional high permittivity materials were prepared by introducing inorganic fillers such...
Flip chip packaging system consists of different materials in the connecting parts, and has an undesirable stress distribution on the chips. Large residual strain will lead to a deterioration of the circuit performance, andresearchers are working to reduce the residual strain in the packaging system. In our work, a silicon stress sensor chip is fabricated to measure the stress distribution in flip...
A fast-speed pulse detector based on Si-Schottky diode is designed in the waveguide. It is very easy to operate this detector because it dispenses with bias current & synch-pulse source. Experimental results show that the pulse response time of this detector is less than 220 ps in the Ka band. In addition, it is characterized by high sensitivity of 1.2 mV/muW. Another advantage of the detector...
This paper reports a new symmetrical beam-mass structure for sandwich capacitive accelerometers. The single-wafer fabrication of the symmetrical double-sided beam-mass structure in which eight straight beams are connected to the corners of the proof mass is accomplished only by anisotropic wet etching of a (100) wafer without convex corner compensation. Different measuring-range accelerometers can...
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