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In the race of fabricating solid‐state nano/microelectronic devices using 2D layered materials (LMs), achieving high yield and low device‐to‐device variability are the two main challenges. Electronic devices that drive currents in‐plane and homogeneously along the 2D‐LMs (i.e., transistors, memtransistors) are strongly affected by local defects (i.e., grain boundaries, wrinkles, thickness fluctuations,...
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