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An analytical charge-sheet drain current model for monolayer transition metal dichalcogenide negative capacitance field-effect transistors (TMD NC-FETs) is proposed by solving the Schrodinger’s equation, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. Results predicted by the developed analytical model agree well with the experimental data. An amplified semiconductor surface...
This paper presents an investigation into the effects of the gate drive resistance on the losses of the MOSFET-snubber-diode (MSD) configuration commonly found in a power converter. An analytical loss model that takes the circuit stray inductances, MOSFET parasitic capacitances, and reverse-recovery characteristic of the freewheeling diode into consideration is derived to describe the interaction...
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate contact ring, as well as on the number of sides that the surrounding ring contacts the substrate. We find that the unilateral gain is impacted by the substrate resistance (Rsx) through the gate-body capacitance feedback path at low to medium frequencies (< 20 GHz)....
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