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Pull tensile test is commonly used to evaluate the bonding strength. But it is time-consuming using glue to attach the fixtures (jigs). In this paper, a novel method for bonding strength evaluation without using glue is developed based on the principles of the material mechanics and fracture mechanics. After two specimen are bonded by a cross structure, the pulling forces are applied at the relevant...
Nano-adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. In this method, the wafer surfaces are sputtered by Ar-ion and deposited with Fe nano-adhesion layers simultaneously. Si-Si and Si-SiN wafers are thus directly bonded at room temperature. The bonding strength is increased by optimizing Fe composition ratio on the Si surfaces. The microstructure and...
Wafer direct bonding technique offers flexible and inexpensive ways to fabricate novel semiconductor devices. But its application is much limited by high temperature process and void problem. In this study, room temperature Si/Si wafer direct bonding has been performed using sequential plasma pretreatment prior to bonding. A shorter O2 reactive ion etching (RIE) pretreatment (~10 s) and followed by...
8-inch Si-Si wafer bonding at room temperature is performed by means of two modified surface activated bonding (SAB) methods respectively, namely the SAB with nano-adhesion layer and sequential plasma activated bonding (SPAB). And post-annealing processes in atmospheric air utilized do not aim to improve the bonding strength, but to investigate void formation if the bonded wafers heated in subsequent...
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