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We demonstrate a bonding method for combining silicon and quartz glass wafers using a sequential wet chemical surface activation (i.e., SPM→RCAl cleaning). After a multistep post annealing at 200°C, strong bonding with no voids or microcracks was obtained. Based on the detailed surface and bonding interface characterizations, a bonding model was developed to gain insight the low-temperature bonding...
Wafer direct bonding is a generic tool enabling realization of innovative structures. To expand the applications, an ideal bonding method is expect to achieve sufficient bonding strength at room temperature without requiring annealing, low-cost without high-vacuum system and facile treatment process. In this paper, a novel and simple wafer direct bonding process using fluorine containing plasma activation...
Wafer direct bonding technique offers flexible and inexpensive ways to fabricate novel semiconductor devices. But its application is much limited by high temperature process and void problem. In this study, room temperature Si/Si wafer direct bonding has been performed using sequential plasma pretreatment prior to bonding. A shorter O2 reactive ion etching (RIE) pretreatment (~10 s) and followed by...
8-inch Si-Si wafer bonding at room temperature is performed by means of two modified surface activated bonding (SAB) methods respectively, namely the SAB with nano-adhesion layer and sequential plasma activated bonding (SPAB). And post-annealing processes in atmospheric air utilized do not aim to improve the bonding strength, but to investigate void formation if the bonded wafers heated in subsequent...
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