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This work explores crosstalk effects of avalanche CMOS photodiodes in a 3D sensor array where photodiodes were implemented under different shapes, perimeters, areas, structures and array sizes using the TSMC 0.35µm technology. The breakdown voltages are increased with areas and depths of p-n junctions, and decreased as perimeters of p-n junctions and array sizes increasing. The preferred shape of...
This work develops a 2 Dimension (2D)/ 3 Dimension (3D)-integrated image sensor that adopts the same photodiode under different biased voltages and integrated sensing circuitry. By using the TSMC CMOS technology, four different photodiodes, N-well_P-substrate, P-diffusion_N-well, Pdiffusion_ N-well_P-substrate and N-diffusion_P-substrate, are available. Since P-substrate is used for grounding and...
Three photodiodes of P-diffusion_N-well_P-substrate, N-well_P-substrate, N-diffusion_P-substrate photodiodes using the TSMC 0.35μm CMOS technology are implemented to understand their breakdown voltages at the Geiger mode. The measured results reveal that a photodiode with a larger perimeter yields a lower breakdown voltage. N-well_P-substrate and N-diffusion_P-substrate photodiodes have the largest...
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