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In this study, we review on SSRM studies on 2D carrier profiles of various devices applications including S/D engineering and failure analysis in real SRAM devices. The correlation of SSRM images with junction leakage current of nMOSs was confirmed. We also directly observed carbon (C) co-doped Si:C nMOSs, clarifying the C doping effect on phosphorous diffusion and therefore on device characteristics...
In this study, we directly observed fail bits of pMOS with Vth variations in SRAM by both SSRM and a nanoprober, clarified that the failure is originated from the phosphorus anomalous diffusion into the pMOS gate bottom. We succeeded in observing the pn-junction boundary within a thin SRAM poly-Si gate with the size of less than 60 nm. The gate-phosphorus doping and STI geometry influence on pn boundary...
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