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Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single‐crystalline GaN film on WS2‐glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice...
Semiconductors
In article number 2202529, Tongbo Wei, Zhongfan Liu, Peng Gao, Zhiqiang Liu, and co‐workers find that geometry matched WS2 can provide a proper lattice potential field for nitrides epitaxial growth. By using a transferred WS2 buffer layer, a single‐crystalline GaN epilayer can be obtained on an amorphous quartz glass by heterogenous epitaxy.
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