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This paper presents a novel first-order temperature compensated current reference. The measured temperature coefficient of this current reference is less than 290 ppm/°C over the temperature range from -20°C to 110°C. What's more, it is compatible with standard CMOS technology, which makes its application more flexible.
An integrated 6.2-9.5GHz CMOS UWB receiver for WiMedia MB-OFDM is proposed. The fully differential receiver consists of a wideband LNA and a down conversion mixer with high and low gain mode. A low-pass filter and a programmable gain amplifier are also included. The chip was fabricated in TSMC 0.13-μm RF CMOS process. Measurement results show that the receiver achieves voltage gain from 21dB to 63dB...
An analog baseband chain for WiMedia MB-OFDM UWB and China UWB standard is presented. The baseband chain consists of a fifth-order chebyshev type low pass filter with two switchable cut-off frequencies. A programmable gain amplifier based on enhanced source degeneration architecture is also included. The chip was fabricated in TSMC 0.13-μ RF CMOS process. Measurement results show that the analog baseband...
A voltage reference circuit capable of sub-1 V operation and with ultra-low power consumption is introduced in this paper. In the proposed circuit, proportional-to-absolute-temperature voltage is generated by using the series-connection of two NMOS devices working in sub-threshold region and the gate-to-source voltage of another NMOS device is adopted to realize the complementary-to-absolute-temperature...
This paper presents new quasi-static single-phase energy recovery logic (QSSERL) which, unlike any other existing adiabatic logic family, uses single sinusoidal supply-clock without additional voltages. This not only ensures lower energy dissipation, but also simplifies the clock design which would be otherwise more complicated due to the signal synchronization requirement. It is demonstrated that...
A novel technique is proposed to improve the linearity of the MOS sampling switch (SW) by generating a replica transistor with the same threshold voltage as the sampling transistor. And it is obtained by forcing the replica transistor to operate in the triode region with the help of resistive voltage divider. The circuit has been implemented in chartered 0.35 mum standard CMOS technology. The proposed...
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