The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Characteristics of oxide semiconductor thin film transistors prepared by flexographic printing technique have been studied. The device was a field-effect transistor substrate (15mm×15mm, n-doped silicon, 90nm SiO2 layer) with pre-structured gold electrodes and a printed active layer. The active layer was printed with a indium–zinc-oxide precursor solution and then annealed at 450°C for 4min on a hotplate...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.