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A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS2 channel and Al2O3 gate dielectric. To avoid a possible noise signal contamination from the top MoS2 surface by oxygen or water molecules absorption, the nMOSFETs with multilayer MoS2...
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