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This paper reports an enhanced photocatalysis system for organic pollutants degradation, using high-aspect-ratio (HAR) Si/ITO/WO3 micropost photoelectrodes, fabricated by deep reactive ion etching (DRIE) and sputtering. Compared with traditional Titanium Dioxide (TiO2) photoelectrodes, Tungsten trioxide (WO3) coupled with Si can absorb visible light. Besides, an optimized HAR electrode configuration...
Semiconductor companies have developed 2.5D IC integration technology, which applies a silicon interposer with Cu through silicon vias (Cu TSVs) as a platform for interconnecting and integrating heterogeneous chips horizontally and vertically as a transition approach to 3D IC. The existing Cu TSVs might make the silicon interposers more fragile, due to structural non-homogeneity and weak interface...
Crystal structure and magnetic properties have been studied for bulk MnFePSi compounds prepared by the spark plasma sintering method. The effect of Si content on the crystal structure and the magnetic properties of the compounds were investigated. The MnFePSi compounds crystallize in a hexagonal Fe2P-type structure without obvious secondary phase. Magnetic measurements indicate that the compounds...
The integration of a differential antenna in mainstream 65 nm CMOS was investigated. A 60 GHz prototype integrated circuit (IC) was developed, including a seal-ring and on-chip calibration structures. Measured results show excellent impedance matching properties over a 10 GHz bandwidth and a moderate antenna gain of −1.5 dBi. However, this is still a significant improvement as compared to state-of-the-art...
The ultra-thin nickel silicide films were grown using both soak and spike anneals from temperatures from 160??C to 400??C in 10-20??C intervals as a means to characterize the low temperature annealing capabilities of our RTP system. The Rs transformation curves were generated and the resulting films were characterized by Rs and xTEM. A ~5 nm Ni2Si film is formed at 160C from a starting material of...
This paper discusses combining focused ion beam (FIB) circuit edit with OBIRH technology. FIB can cut or rewire an integrated circuit. OBIRCH can locate failure location. If FIB circuit edit & OBIRCH were applied at the same time, we can locate the failure site and find the root cause of the failure. The paper share one case of failure analysis and present advanced FIB technology.
This paper demonstrates the integration of Au nanocrystals (NCs) into nonvolatile metal-oxide-semiconductor (MOS) with a hybrid method operated at room temperature. The comparison of structural and electrical characteristics between the hybrid Au NCs fabricated by chemical syntheses and film deposition Au NCs fabricated by rapid thermal annealing (RTA) was carried out. The size of the Au NCs formed...
Forming highly active shallow junctions is a key component enabling low external resistance and high transistor performance. Millisecond flash or scanning laser anneals can be used to contain diffusion and optimize activation, either directly by leveraging temperatures exceeding 1200C, or in combination with non-equilibrium processes such as amorphization plus solid phase epitaxy or liquid phase epitaxy...
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