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In this paper, flash annealing at high temperature (HT) is adopted to fabricate graphene through thermal decomposition of SiC. Interestingly, surface roughening will lead to near-free-standing epitaxial graphene (EG) decouple from SiC substrate. The process dependent morphology and properties of EG are studied. As compared to flat EG on SiC prepared by conventional thermal decomposition, the decoupled...
Controllable and damage-free doping of graphene is challenging because of the ultra-thin nature of graphene. In this work, epitaxial graphene prepared by thermal decomposition of 6H-SiC is doped with Ag substitutionally by annealing in a silver atmosphere. Scanning tunneling microscopy (STM) reveals that the Ag atoms are preferentially embedded in the bilayer regions substituting for C atoms at the...
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